Photon-Induced Anisotropic Oxidation along p-n Junctions in Al(x)Ga(1-x)As-GaAsQuantum Well Heterostructures. (Reannouncement with New Availability Information)

摘要

Data are presented demonstrating, in 'wet' oxidation, anisotropic oxide formationat p-n junction edges in A1(x)Ga1-(x)As-GaAs quantum well heterostructures (QWHs). The QWH high gap A1(x)Ga1-(x)As upper confining layer is oxidized via H2O vapor at elevated temperatures (425-525 deg C). The higher energy portion of 'blackbody' radiation (the furnace ambient) at these temperatures generates sufficient electron-hole pairs to drive anodic oxidation at the edge of a QWH p-n junction. The anisotropic oxidation, on the p-type side of the junction, and possible reaction mechanisms are described.