Photon-Induced Random Telegraph Signal Due to Potential Fluctuation of a Single Donor-Acceptor Pair in Nanoscale Si p-n Junctions

摘要

We study the photoresponse of Si nanoscale p-n and p-i-n diodes. As a result, we find a photon-sensitive multilevel random telegraph signal (RTS) in p-n diodes, but not in p-i-n diodes. From this fact and analysis of current jumps in the RTS, the multilevel RTS is ascribed to single photocarrier charging and discharging in a donor-acceptor pair in the depletion region. Thus, it is found that a donor-acceptor pair plays an important role in p-n junctions, while, according to our previous report, a single donor (acceptor) works as an electron (hole) trap in junctionless field-effect transistors.