METHOD FOR FORMING A magnetic tunnel junction based on nanoscale metal-insulator-metal tunnel junctions AND STRUCTURE FOR MAGNETIC magnetoresistive random access memory (optional)

摘要

FIELD: physics.;SUBSTANCE: method of forming a magnetic tunnel junction based on nanosize metal-insulator-metal structures involves formation of a magnetic tunnel junction on a substrate which has a freely magnetising layer, a fixed magnetisation layer and a tunnel insulating layer. The tunnel insulating layer is formed by depositing a dielectric layer on the freely magnetising layer. An iron layer is deposited onto the substrate in a vacuum and a silicon layer is then deposited on the iron layer. Further, the surface of the deposited silicon is oxidised, after which a silicon layer is deposited on the resulting silicon oxide layer and an iron layer is then deposited on top. Two layers of ferromagnetic silicide are then formed at the same time under the silicon oxide layer and over the silicon oxide layer through a solid-phase reaction at 400-650°C.;EFFECT: simplification of the method, shorter time for formation of a magnetic tunnel junction and obtaining high values of spin-polarisation due to use of ferromagnetic semimetals as electrodes with easy integration into existing silicon technology.;11 cl, 2 dwg, 1 ex