MAGNETIC TUNNELING JUNCTION TYPE MAGNETIC RANDOM ACCESS MEMORY CELL, MAGNETIC TUNNELING JUNCTION TYPE MAGNETIC RANDOM ACCESS MEMORY CELL ARRAY, AND METHOD FOR SELECTING AND RECORDING MAGNETIC TUNNELING JUNCTION TYPE MAGNETIC RANDOM ACCESS MEMORY CELL

摘要

PROBLEM TO BE SOLVED: To prevent an erroneous operation due to thermal factor and magnetic factor, by stabilizing the magnetization states of a ferromagnetic free layer.;SOLUTION: A magnetic tunneling junction type magnetic random access memory cell is comprised of bit lines 20 so as to constitute a composite structure comprising a soft adjacent magnetic layer 24. Since the soft adjacent magnetic layer 24 of the bit lines 20 and the ferromagnetic free layer 38 of a MTJ element 50 are mutually coupled in magnetostatic manner, when the MTJ element 50 has a shape induced magnetic anisotropy, while the magnetization states of the ferromagnetic free layer 38 is switched between states of relatively high stability (C states in which the magnetization direction of the ferromagnetic free layer 38 is locked), and states of relatively low stability (S states in which the magnetization direction of the ferromagnetic free layer 38 is unlocked), an information is recorded by selecting a MTJ-MRAM cell 150.;COPYRIGHT: (C)2006,JPO&NCIPI