首页>
外国专利>
Ferromagnetic tunnel junction random access memory, spin valve random access memory, single ferromagnetic layer random access memory, and memory cell array using the same
Ferromagnetic tunnel junction random access memory, spin valve random access memory, single ferromagnetic layer random access memory, and memory cell array using the same
A ferromagnetic tunnel junction random access memory includes a ferromagnetic tunnel junction structure including a first ferromagnetic layer, a second ferromagnetic layer disposed adjacent to the first ferromagnetic layer and having a fixed magnetization, and a tunnel insulator layer interposed between the first and second ferromagnetic layers; a conductor plug penetrating the first ferromagnetic layer, the tunnel insulator layer and the second ferromagnetic layer along a center axis; a first selection line coupled to a first end of the conductor plug; and a second selection line coupled to a second end of the conductor plug opposite to the first end. The first ferromagnetic layer has a generally ring shape surrounding the conductor plug and is insulated from the conductor plug. One of the first and second ferromagnetic layers has an antiferromagnetic layer pattern on a portion thereof.
展开▼