Random access memory chip, has magnetoresistive memory cells each including magnetic tunnel junction having fixed and free magnetic regions, where free magnetic region includes two ferromagnetic layers that are antiferromagnetically coupled

摘要

The chip has a set of magnetoresistive memory cells each including a magnetic tunnel junction having fixed and free magnetic regions. The free magnetic region includes two ferromagnetic layers that are antiferromagnetically coupled, where a coil surrounds the memory chip for creating a magnetic offset field. The regions are stacked in a parallel, overlying relationship separated by a layer of non-magnetic material. An independent claim is also included for a method of writing to a random access memory.