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p-n Junction Detector Directly Integrated with (Ga(1-x)Al(x)) as LOC-DBR Laser.

机译：p-n结探测器与（Ga（1-x）al（x））直接集成为LOC-DBR激光器。

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作者
Shams, M. K.; Namizaki, H.; Wang, S.;
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年度 1977
页码 1-4
总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Semiconductor lasers; Semiconductor junctions; Aluminum gallium arsenide; Optical waveguides; Optical detectors; Reprints; Infrared detectors; Aluminum arsenides;

机译：半导体激光器;半导体结;砷化铝镓;光波导;光学探测器;重印;红外探测器;砷化铝;

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3. Effects of Mg dopant in Al-composition-graded Al_xGa_(1-x)N (0.45 ≤x) on vertical electrical conductivity of ultrawide bandgap AlGaN p-n junction [J] . Sato Kosuke, Yamada Kazuki, Sakowski Konrad, Applied physics express . 2021,第9期

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p-n Junction Detector Directly Integrated with (Ga(1-x)Al(x)) as LOC-DBR Laser.

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