Fabrication of transparent p-n junction composed of heteroepitaxially grown p-Li0.15Ni0.85O and n-ZnO films for UV-detector applications

摘要

Thin films of high-quality p-type Li0.15Ni0.85O (LNO) and n-type ZnO were heteroepitaxially grown on MgO(111) substrate by pulsed laser deposition technique to form transparent wide bandgap heterojunctions. The epitaxial nature of this p-LNO/n-ZnO/MgO heterojunction was confirmed to be (111)LNO