首页> 美国政府科技报告 >Determining the Presence of Ordering in Ternary Semiconductor Alloys Grown by Molecular Beam Epitaxy.
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Determining the Presence of Ordering in Ternary Semiconductor Alloys Grown by Molecular Beam Epitaxy.

机译:确定分子束外延生长的三元半导体合金中的有序化存在。

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摘要

Some ternary semiconductor alloys spontaneously order during growth. We observe this phenomenon in some alloys grown for infrared (IR) applications by molecular beam epitaxy (MBE). Ordering can affect not only the crystal structure, but also important optical and electronic properties that ultimately affect a material's suitability for IR device applications. It is important to be aware of the presence of ordering, which is not usually detectable by the standard (004) x-ray diffraction (XRD) measurements typically used as a simple measurement of film quality.

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