Anomalous growth temperature dependence of electrical properties of InP-based pseudomorphic resonant tunneling diodes grown by molecular beam epitaxy.

摘要

The effects of growth temperature on the negative differential resistance characteristics and the epitaxial layer structure of pseudomorphic In_0.53Ga_0.47As/AlAs/InAs resonant tunneling diodes (RTDs) grown by molecular beam epitaxy have been studied.For RTDs with a symmetric structure and with an InAs subwell layer thinner than an extimated critical thickness,asymmetrical current-voltage characteristics were observed at growth temperatures below the critical temperature of 410 deg C,though good symmetric characteristics were obtained at higher temperatures.Examination of the RTD structures by transmission electron microscopy and atomic force microscopy revealed that three-dimensional growth of InAs at lower temperatures degrades the RTD structures,resulting in the asymmetric characteristics.