GaInAsP/InP 1.35 Micrometer Double Heterostructure Laser Grown on SiliconSubstrate by Metalorganic Chemical Vapor Deposition

摘要

Semiconductor lasers emitting at 1.3 micrometers wavelength are important sourcesof light for telecommunication purposes using silica fibers. It has been shown that the GaInAsP/InP material system is suitable for achieving this goal. So far most of such lasers have been grown on InP substrates but recently interest has risen in growing these structures on Si substrate instead. In this way it is possible to benefit from the advantages offered by Si, which include mechanical strength, high thermal conductivity, the possibility of growth on large diameter substrates, and the realization of optoelectronic integrated circuits entirely on Si substate.