1.3 mu m GaInAsP/InP buried heterostructure graded index separate confinement multiple quantum well (BH-GRIN-SC-MQW) lasers entirely grown by metalorganic chemical vapour deposition (MOCVD)

Kasukawa A.; Imajo Y.

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1.3 mu m GaInAsP/InP buried heterostructure graded index separate confinement multiple quantum well (BH-GRIN-SC-MQW) lasers entirely grown by metalorganic chemical vapour deposition (MOCVD)

机译：通过金属有机化学气相沉积（MOCVD）完全生长的1.3μm GaInAsP / InP掩埋异质结构渐变折射率分离禁区多量子阱（BH-GRIN-SC-MQW）激光器

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Reports the first successful demonstration of a 1.3 mu m GaInAsP/InP buried heterostructure graded index separate confinement multiple quantum well laser (BH-GRIN-SC-MQW LD) entirely grown by three-step low pressure metal-organic chemical vapour deposition (LP-MOCVD). The threshold current and the differential quantum efficiency were 31 mA (threshold current density 3.4 kA/cm/sup 2/) and 28%/facet, respectively. A characteristic temperature of 65 K was obtained.

机译：报告首次成功演示了由三步低压金属有机化学气相沉积（LP-）完全生长的1.3μm GaInAsP / InP埋入异质结构渐变折射率分离禁区多量子阱激光器（BH-GRIN-SC-MQW LD） MOCVD）。阈值电流和微分量子效率分别为31 mA（阈值电流密度3.4 kA / cm / sup 2 /）和28％/ facet。获得65 K的特征温度。

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来源
《Electronics Letters》 |1989年第2期|P.104-105|共2页
作者
Kasukawa A.; Imajo Y.;
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作者单位

Furukawa Electr. Co. Ltd., Yokohama, Japan;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
CVD coatings; III-V semiconductors; gallium arsenide; gradient index optics; indium compounds; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; 1.3 micron; 31 mA; 65 K; GaInAsP-InP; buried heterostructure graded index separate confinement multiple quantum well; characteristic temperature; differential quantum efficiency; metalorganic chemical vapour deposition; three-step low pressure; threshold current; threshold current density;

机译：CVD涂层;III-V半导体;砷化镓;梯度折射率光学器件;铟化合物;半导体生长;半导体结激光器;半导体量子阱;1.3微米;31 mA;65 K;GaInAsP-InP;埋藏的异质结构梯度指数分隔约束多量子阱;特征温度;微分量子效率;金属有机化学气相沉积;三步低压;阈值电流;阈值电流密度;

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专利

1. 1.5 mu m GaInAs/GaInAsP graded index separate confinement heterostructure multiple quantum well (GRIN-SCH-MQW) laser diodes grown by metalorganic chemical vapour deposition (MOCVD) [J] . Kasukawa A., Murgatroyd I.J. Electronics Letters . 1989,第10期

机译：通过金属有机化学气相沉积（MOCVD）生长的1.5μm的GaInAs / GaInAsP梯度折射率分离禁区异质结构多量子阱（GRIN-SCH-MQW）激光二极管
2. Preliminary reliability studies of 1.55 mu m graded index separate confinement buried heterostructure (GRINSCH) multiple quantum well (MQW) lasers grown by metalorganic vapour phase epitaxy (MOVPE) [J] . Redstall R.M., Skeats A.P. Electronics Letters . 1990,第15期

机译：通过金属有机气相外延（MOVPE）生长的1.55μm梯度折射率分离禁闭掩埋异质结构（GRINSCH）多量子阱（MQW）激光器的初步可靠性研究
3. Reliable 1.5 mu m buried heterostructure, separate confinement, multiple quantum well (BH-SC-MQW) lasers entirely grown by metalorganic vapour-phase epitaxy (MOVPE) [J] . Seltzer C.P., Burness A.L. Electronics Letters . 1989,第21期

机译：可靠的1.5μm掩埋异质结构，单独限制，多量子阱（BH-SC-MQW）激光器，完全通过金属有机气相外延（MOVPE）生长
4. 1.3 /spl mu/m GaInAsP/InP square buried heterostructure vertical cavity surface emitting laser grown by all MOCVD [C] . Uchiyama, S., Kashiwa, Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on . 1995

机译：全部MOCVD生长的1.3 / spl mu / m GaInAsP / InP方形掩埋异质结构垂直腔表面发射激光器
5. The growth of aluminum gallium arsenide/gallium arsenide graded barrier quantum well heterostructure lasers on planar and nonplanar substrates by metalorganic chemical vapor deposition [D] . Givens, Michael Eugene. 1992

机译：通过金属有机化学气相沉积，铝镓砷镓/镓砷化镓梯度阻隔量子阱异质结构激光
6. Quantum Hall resistance standards from graphene grown by chemical vapour deposition onsilicon carbide [O] . F. Lafont, R. Ribeiro-Palau, D. Kazazis, -1

机译：通过化学气相沉积法在石墨烯上生长的量子霍尔电阻标准碳化硅
7. Charged exciton emission at 1.3 $\mu$m from single InAs quantum dots grown by metalorganic chemical vapor deposition [O] . Cade, N. I., Gotoh, H., Kamada, H., 2005

机译：单个Inas量子点的激子发射电荷为1.3美元/μ美元通过金属有机化学气相沉积生长
8. GaInAsP/InP 1.35 Micrometer Double Heterostructure Laser Grown on SiliconSubstrate by Metalorganic Chemical Vapor Deposition [R] . Mobarhan, K., Jelen, C., Kolev, E., 1993

机译：GaInasp / Inp 1.35微米双异质结构激光器通过金属有机化学气相沉积在硅基板上生长

1.3 mu m GaInAsP/InP buried heterostructure graded index separate confinement multiple quantum well (BH-GRIN-SC-MQW) lasers entirely grown by metalorganic chemical vapour deposition (MOCVD)

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