1.5 mu m GaInAs/GaInAsP graded index separate confinement heterostructure multiple quantum well (GRIN-SCH-MQW) laser diodes grown by metalorganic chemical vapour deposition (MOCVD)

Kasukawa A.; Murgatroyd I.J.

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1.5 mu m GaInAs/GaInAsP graded index separate confinement heterostructure multiple quantum well (GRIN-SCH-MQW) laser diodes grown by metalorganic chemical vapour deposition (MOCVD)

机译：通过金属有机化学气相沉积（MOCVD）生长的1.5μm的GaInAs / GaInAsP梯度折射率分离禁区异质结构多量子阱（GRIN-SCH-MQW）激光二极管

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Very low threshold current density GaInAs/GaInAsP GRIN-SCH-MQW laser diodes grown by MOCVD emitting at 1.5 mu m are demonstrated for the first time. The average threshold current density for 375 mu m cavity length devices (200 mu m width) was 1.2 KA/cm/sup 2/, which is the lowest value reported for GaInAs/InP laser diodes.

机译：首次展示了通过MOCVD生长的极低阈值电流密度GaInAs / GaInAsP GRIN-SCH-MQW激光二极管，其发射电流为1.5μm。 375微米腔长器件（200微米宽度）的平均阈值电流密度为1.2 KA / cm / sup 2 /，这是报道的GaInAs / InP激光二极管的最低值。

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来源
《Electronics Letters》 |1989年第10期|P.659-661|共3页
作者
Kasukawa A.; Murgatroyd I.J.;
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作者单位

Yokohama R&D Labs., Furukawa Electr. Co. Ltd., Japan;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
III-V semiconductors; gallium arsenide; gallium compounds; gradient index optics; indium compounds; laser transitions; optical workshop techniques; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.5 micron; 375 micron; GRIN; GRIN-SCH-MQW; GaInAs-GaInAsP; MOCVD; MQW; cavity length; graded index; heterostructure; laser diodes; metalorganic chemical vapour deposition; multiple quantum well; semiconductor lasers; separate confinement; threshold current density;

机译：III-V型半导体;砷化镓;镓化合物;梯度折射率光学元件;铟化合物;激光跃迁;光学车间技术;半导体生长;半导体结激光器;气相外延生长;1.5微米;375微米;GRIN;GRIN-SCH-MQW;GaInAs-GaInAsP;MOCVD;MQW;腔长;梯度指数;异质结构;激光二极管;金属有机化学气相沉积;多量子阱;半导体激光器;单独约束;阈值电流密度;

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专利

1. 1.3 mu m GaInAsP/InP buried heterostructure graded index separate confinement multiple quantum well (BH-GRIN-SC-MQW) lasers entirely grown by metalorganic chemical vapour deposition (MOCVD) [J] . Kasukawa A., Imajo Y. Electronics Letters . 1989,第2期

机译：通过金属有机化学气相沉积（MOCVD）完全生长的1.3μm GaInAsP / InP掩埋异质结构渐变折射率分离禁区多量子阱（BH-GRIN-SC-MQW）激光器
2. Low threshold current density 1.5 mu m GaInAs/AlGaInAs graded-index separate-confinement-heterostructure quantum well laser diodes grown by metal organic chemical vapour deposition [J] . Kasukawa A., Bhat R. Electronics Letters . 1991,第12期

机译：通过金属有机化学气相沉积法生长的低阈值电流密度1.5μm GaInAs / AlGaInAs梯度折射率分离约束异质结构量子阱激光二极管
3. Reliable 1.5 mu m buried heterostructure, separate confinement, multiple quantum well (BH-SC-MQW) lasers entirely grown by metalorganic vapour-phase epitaxy (MOVPE) [J] . Seltzer C.P., Burness A.L. Electronics Letters . 1989,第21期

机译：可靠的1.5μm掩埋异质结构，单独限制，多量子阱（BH-SC-MQW）激光器，完全通过金属有机气相外延（MOVPE）生长
4. 1.5/spl mu/ InGaAs/InGaAsP separate confinement multi-quantum well lasers grown by chemical beam epitaxy [C] . Tsang, W.T., Wu, . 1990

机译：通过化学束外延生长的1.5 / spl mu / InGaAs / InGaAsP分离禁闭多量子阱激光器
5. The growth of aluminum gallium arsenide/gallium arsenide graded barrier quantum well heterostructure lasers on planar and nonplanar substrates by metalorganic chemical vapor deposition [D] . Givens, Michael Eugene. 1992

机译：通过金属有机化学气相沉积，铝镓砷镓/镓砷化镓梯度阻隔量子阱异质结构激光
6. Quantum Hall resistance standards from graphene grown by chemical vapour deposition onsilicon carbide [O] . F. Lafont, R. Ribeiro-Palau, D. Kazazis, -1

机译：通过化学气相沉积法在石墨烯上生长的量子霍尔电阻标准碳化硅
7. Prediction of the Structural Performances of ZnO Nanowires Grown on GaAs (001) Substrates by Metalorganic Chemical Vapour Deposition (MOCVD) [O] . W. Lee, H. G. Sohn, J. -m. Myoung 2015

机译：金属有机化学气相沉积（mOCVD）预测Gaas（001）衬底上生长的ZnO纳米线的结构性能
8. GaInAsP/InP 1.35 Micrometer Double Heterostructure Laser Grown on SiliconSubstrate by Metalorganic Chemical Vapor Deposition [R] . Mobarhan, K., Jelen, C., Kolev, E., 1993

机译：GaInasp / Inp 1.35微米双异质结构激光器通过金属有机化学气相沉积在硅基板上生长

1.5 mu m GaInAs/GaInAsP graded index separate confinement heterostructure multiple quantum well (GRIN-SCH-MQW) laser diodes grown by metalorganic chemical vapour deposition (MOCVD)

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