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1.5/spl mu/ InGaAs/InGaAsP separate confinement multi-quantum well lasers grown by chemical beam epitaxy

机译：通过化学束外延生长的1.5 / spl mu / InGaAs / InGaAsP分离禁闭多量子阱激光器

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《》|1990年|P.150-151|共2页
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Tsang; W.T.; Wu; M.C.;
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中图分类无线电电子学、电信技术;
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专利

1. InGaP/InGaAsP/GaAs 0.808 /spl mu/m separate confinement laser diodes grown by metalorganic chemical vapor deposition [J] . Diaz J., Eliashevich I. IEEE Photonics Technology Letters . 1994,第2期

机译：通过金属有机化学气相沉积法生长的InGaP / InGaAsP / GaAs 0.808 / splμ/ m分离限制激光二极管
2. Low threshold, compressively-strained InAsP/InGaAsP and strain-compensated InAsP/InGaP 1.3 /spl mu/m lasers grown by gas source molecular beam epitaxy [J] . Uenohara H., Gokhale M.R. Electronics Letters . 1997,第14期

机译：气体源分子束外延生长的低阈值，压缩应变的InAsP / InGaAsP和应变补偿的InAsP / InGaP 1.3 / splμ/ m激光器
3. Low threshold current 1.3 /spl mu/m InAsP/InGaAsP lasers grown by gas-source molecular beam epitaxy [J] . Thiagarajan P., Giudice G.E. Electronics Letters . 1996,第12期

机译：气体源分子束外延生长的低阈值电流1.3 / spl mu / m InAsP / InGaAsP激光器
4. 1.5/spl mu/ InGaAs/InGaAsP separate confinement multi-quantum well lasers grown by chemical beam epitaxy [C] . Tsang W.T., Wu M.C., Institute of Electric and Electronic Engineer IEEE International Semiconductor Laser Conference . 1990

机译：1.5 / SPL MU / INGAAS / INGAASP通过化学束外延生长的单独限制多量子孔激光器
5. Power and spectral characterization of InGaAsP-InP multi-quantum well lasers [D] . Prosyk, Kelvin. 1998

机译：InGaASP-INP多量子孔激光器的功率和光谱表征
6. Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001) Patterned Si Substrates by Metal Organic Chemical Vapor Deposition [O] . Ludovico Megalini, Simone Tommaso Šuran Brunelli, William O. Charles, 2018

机译：应变补偿的InGaAsP超晶格用于通过金属有机化学气相沉积减少在精确取向的（001）图案化Si衬底上生长的InP的缺陷
7. Radiative and Auger Recombination in 1.3 mu m InGaAsP and 1.5 mu m InGaAs Quantum-well Lasers Measured Under High Pressure at Low and Room Temperatures [O] . Jin S R, Sweeney S J, Ahmad C N, 2004

机译：在低温和室温下高压下测量的1.3μmInGaAsP和1.5μmInGaAs量子阱激光器的辐射和俄歇复合
8. AlInGaAs/AlGaAs Separate-Confinement Heterostructure Strained Single Quantum WellDiode Lasers Grown by Organometallic Vapor Phase Epitaxy [R] . Wang, C. A., Walpole, J. N., Missaggia, L. J., 1991

机译：有机金属气相外延生长的alInGaas / alGaas分离限制异质结构应变单量子阱二极管激光器

1.5/spl mu/ InGaAs/InGaAsP separate confinement multi-quantum well lasers grown by chemical beam epitaxy

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