Low threshold current 1.3 /spl mu/m InAsP/InGaAsP lasers grown by gas-source molecular beam epitaxy

摘要

InAsP/InGaAsP highly strained MQW lasers grown by gas source molecular beam epitaxy with low threshold currents are reported. Threshold currents as low as 1.1 mA at 20/spl deg/C and 6.1 mA at 100/spl deg/C were measured. Lasers with antireflection/high reflection coated facets exhibited slope efficiencies as high as 0.48 mW/mA and output powers of 65 mW at 20/spl deg/C.