Highly strained 1.3 /spl mu/m InAsP-InGaAsP lasers with low threshold currents grown by gas-source molecular beam epitaxy

摘要

Highly strained 1.3 /spl mu/m InAsP-InGaAsP lasers grown by gas-source molecular beam epitaxy with low threshold currents are reported. Threshold currents as low as 1.1 mA at 20/spl deg/C and 6.1 mA at 100/spl deg/C were measured.