Low threshold, compressively-strained InAsP/InGaAsP and strain-compensated InAsP/InGaP 1.3 /spl mu/m lasers grown by gas source molecular beam epitaxy

摘要

1.3 /spl mu/m wavelength strain-compensated InAsP/InGaP/InGaAsP/InP and compressively-strained InAsP/InGaAsP/InP separate confinement heterostructure multiquantum well lasers grown by gas source molecular beam epitaxy are demonstrated for the first time. Record low threshold current densities of 210 A/cm/sup 2/ for 2 mm long broad-area compressively-strained lasers were obtained.