InGaP/InGaAsP/GaAs 0.808 /spl mu/m separate confinement laser diodes grown by metalorganic chemical vapor deposition

摘要

Aluminum-free InGaP/InGaAsP/GaAs separate confinement heterostructures have been grown and used for broad-area stripe diode laser fabrication. The lasers demonstrated a uniform near-field pattern and emission spectrum at /spl lambda/=0.808 /spl mu/m with a full width at half maximum /spl les/2 mm, meeting the necessary requirements for Nd:YAG pumping systems. A threshold current density of 470 A/cm/sup 2/ and differential efficiency of 0.7 W/A with series resistance of 0.12 /spl Omega/ for 1.37 mm-long diodes have been measured.