Infrared Detectors Based on Si/SiGe Superlattices and Silicide/SiGe Schottky Barriers Operating beyond 12um.

摘要

Work performed in Phase I of this project clearly established the feasibility of using SiGe detectors in the LWIR region. The most important achievements are: Both, Schottky barrier and multiquantum well structures based on SiGe alloys and capable of detection in the LWIR region have been grown by the RTCVD epitaxial growth method; For the first time, the selective epitaxial growth of LWIR SiGe detectors on silicon substrates with CMOS circuitry has been demonstrated, thus showing that monolithically integrated detector-multiplexer structures are feasible; Schottky barrier detectors with cut-off wavelengths exceeding 10 micrometers have been demonstrated; Extensive spectral response, cut-off wavelength and dark current measurements for Schottky barrier detectors based on Pt silicide/ SiGe alloys with Ge content ranging from 0 to 20% have been carried out and discussed. Infrared detectors, SiGe alloys, Schottky barrier detectors, Multiquantum wells.