Low Energy Ion Beam Assisted Growth of Homoepitaxial Silicon Films at Low Temperature.

摘要

The goal of this project was to lower the substrate temperature required to promote device quality epitaxial silicon growth below the 300 deg C mark set by a Japanese group led by T. Ohmi. Normally high substrate temperatures are required to achieve thin film epitaxial growth. A new thin film deposition technique called ion beam assisted deposition offers the possibility to grow epitaxial layers at low substrate temperatures. In this technique, while the atoms are condensing into the epilayer, they are bombarded by low energy noble gas ions. The kinetic energy of the incident ions supplants the thermal energy lost by lowering the substrate temperature and provides enough surface mobility so that the correct crystal structure can grow. Lower temperatures will reduce impurity and interlayer diffusion problems caused by high temperature growth processing steps.