Reduction of Be Out-Diffusion from Heavily Doped GaAs:Be Layers by PseudomorphicIn( x) Ga( 1-x) As Barrier Layers

摘要

The effectiveness of suppressing Be out-diffusion from a Be doped GaAs layer bystrained InGaAs layers using secondary ion mass spectroscopy has been evaluated. The experimental structures consist of an 800 A Be doped (lx 10(exp19)/cu cm) GaAs layer sandwiched between 80 A In(x)Ga(1-x)As (x=0,0.1,0.25) layers. The samples were subjected to rapid thermal annealing (RTA) at 750 deg C for 6 min. It is clearly observed that Be diffusion beyond the InGaAs layers is the fastest for the structure with x=0 and the slowest for the structure with x=0.25. (jg).