A CHEMISTRY FOR ETCHING QUATERNARY INTERFACE LAYERS ON INGAASP MOSTLY FORMED BETWEEN GAAS AND INXGA(1-X)P LAYERS

摘要

A kind of GaAs and InGaP layers of provide that the quaternary interface layers InxGa1-xAsyP1-y for etching formed the 2nd is at heterojunction bipolar transistor (HBTs). According to this method, the interface is exposed, by etching GaAs layers of selective etchant InGaP. Then the interface is selective to InGaP with HCL aqueous solution and H2O2. This method that the controlled etching provides allows HBTs that can manufacture with more complicated, may include multiple interfaces GaAs/InGaP close to ideal design.