Capacitance-Voltage Measurement of Charged Defect Concentration Profile NearSemiconductor Depletion Zones

摘要

We have found a capacitance voltage method to measure the spatial profile ofmajority carrier trap concentration in and near the depletion region of an abrupt p-n semiconductor junction. This method is analogous to the standard capacitance voltage method for measuring the doping concentration profile. We develop specific equations for the hole trap concentration in the p material adjacent to heavily doped n material. Measurements are made on silicon solar cell samples and compared to deep level transient spectroscopy measurements on the same sample. The method is especially useful for measuring spatial gradients in defect concentration, and is derived for defect concentration not exceeding twice the doping concentration.