Long-Wavelength InAsSb Photoconductors Operated at Near Room Temperatures (200-300 K)

摘要

Long-wavelength InAs(1-x)Sb(x) photoconductors operated without cryogenic coolingare reported. The devices are based on p-InAs(1-x)Sb(x)/p-InSb heterostructures grown on (100) semi-insulating GaAs substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Photoreponse up to 14 micrometers has been obtained in a sample with x=0.77 at 300 K, which is in good agreement with the measured infrared absorption spectra. The corresponding effective lifetime of approx. 0.14 ns at 300 K has been derived from stationary photoconductivity. The Johnson noise limited detectivity at lambda=10.6 micrometers is estimated to be about 3.27 X 10(exp 7) cm Hz(1/2)/W at 300 K. jg p1.