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The origin of yellow band emission and cathodoluminescence of Au-catalyzed wurtzite GaN nanowires

机译:金催化纤锌矿GaN纳米线的黄带发射和阴极发光的起源

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摘要

GaN nanowires with large yield are directly synthesized by simply ammoniating the gallium oxide powders in the presence of ammonia gas at 1000 degrees C, under the assistance of Au nanocatalysts. The microstructure and crystallinity of as-synthesized GaN nanowires are well studied by using high-resolution transmission electron microscope (HRTEM) and some structural defects such as stacking faults are found in the GaN nano-crystal. Cathodoluminescence measurement shows that a strong near-band edge (NBE) emission band centered at 384 nm and a broad yellow band in the range of 500-800 nm are observed. Finally, the growth mechanism and possible optical emission process of GaN nanowires are discussed. (C) 2016 Elsevier B.V. All rights reserved.
机译:在Au纳米催化剂的辅助下,通过在1000摄氏度的氨气存在下简单地将氧化镓粉末氨化,即可直接合成高产率的GaN纳米线。使用高分辨率透射电子显微镜(HRTEM)对合成后的GaN纳米线的微观结构和结晶度进行了很好的研究,并且在GaN纳米晶体中发现了一些结构缺陷,例如堆垛层错。阴极发光测量表明,观察到以384 nm为中心的强近带边缘(NBE)发射带和500-800 nm范围内的宽黄带。最后,讨论了GaN纳米线的生长机理和可能的光发射过程。 (C)2016 Elsevier B.V.保留所有权利。

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