On the Origin of The Yellow Donor-Acceptor pair Emission in GaN

摘要

The "deep" yellow donor-acceptor pair recombination is perhaps the most known but less understood photoluminescence emission of GaN. The origin of the "yellow" DAP emission was recently discussed based on the results of optically detected magnetic resonance, stress and PL kinetics investigatis. A deep donor-shallow acceptor transition was proposed based on the results of one ODMR stuyd, whereas other ODMR experiments and stress and PL kinetics measurements were explained in terms of a shallow donor-deep acceptro transition model. The present PL investigatios support the second model of the "yellow" DAP emission. However, the presence ofan underlyig second PL emisson amy explain the reasons for conficting explanations of the results ofthe ODMR investigations by two different groups.