Producing nitride nanostructures e.g. nanowires on side of substrate, by forming base of nanostructures made of wurtzite nitride phase on substrate, and forming upper part of nanostructures made of nitrides having zinc-blende phase on base

摘要

The process comprises forming a base (3) of nanostructures (2) made of wurtzite nitride phase on a side of a substrate (1), and forming an upper part (4) of nanostructures made of nitrides having zinc-blende phase on the base of nanostructures. The base and the upper part of the nanostructures are obtained by performing a molecular beam epitaxy at a temperature of less than 150[deg] C. The upper part of nanostructures comprises a stack of nitride layers of zinc-blende phase, where the layers are stacked with one another along an axis of growth of nanostructures. The process comprises forming a base (3) of nanostructures (2) made of wurtzite nitride phase on a side of a substrate (1), and forming an upper part (4) of nanostructures made of nitrides having zinc-blende phase on the base of nanostructures. The base and the upper part of the nanostructures are obtained by performing a molecular beam epitaxy at a temperature of less than 150[deg] C. The upper part of nanostructures comprises a stack of nitride layers of zinc-blende phase, where the layers are stacked with one another along an axis of growth of nanostructures. The stack consists of a succession of a layer made of a first semiconductor nitride and a layer made of a second semiconductor nitride. The stack is sandwiched between a layer of a third nitride semiconductor of first conductor type consisting of n-type or p-type, and a layer made of a third nitride semiconductor of second conductor type consisting of n-type or p-type.