Hydrogen interactions with interstitial- and vacancy-type defects in silicon

摘要

IR and EPR studies of hydrogen interactions with defects in silicon implanted with protons and deuterons were carried out. An analysis of temperature dependence of Si-H local mode anharmonicity, using isotope substitution of H by D, revealed that anharmonicity is sensitive to the environment of a Si-H dipole. This enables to separate Si-H modes between H atoms in the vicinity of vacancy or Si interstitial conglomerates and to construct models for H-related complexes. It is shown that the 2107, 2122 cm~(-1) doublet may be assigned to V_6H_(12), which can serve as nucleus of {1 1 1} platelets. Mechanisms of H interactions with ring hexavacancy and Si_B3 interstitial defect are considered and tentative models for a new Si-AA17 EPR cener and for H-related shallow donor suggested.