Defects agglomeration in the vicinity of hydrogen-related vacancy-type complexes in proton-implanted silicon

摘要

The results of IR studies of H interactions with radiation-induced defects in crystalline Si implanted with protons (Si:H) are presented. Wide doublets at ～1980, 2060 and ～720, 620cm~(-1) with relatively low thermal stability (the doublets are fully annealed at 550 K) appear in IR absorption spectra of Si: H when implantation dose is increased. It is shown that the doublets may be assigned to nuclei of two hydrogenated amorphous phases with different densities.The Si: H stretching spectra of as-implanted samples are greatly simplified with the increasing implantation dose. Four groups of IR bands predominate at high implantation doses: 2222 cm~(-1)―VH_4 2072 cm~(-1)―V_2H_2; the doublet at 2166, 2191cm~(-1)―V_2H_6; 1967cm~(-1)―an interstitial-type complex and the doublet at 2107, 2122cm~(-1)―a vacancy-type complex. It is shown that the doublet at 2107, 2122cm~(-1) may be tentatively assigned to V_6H_(12) which can serve as nuclei or precursors of the {111} platelets.