Enhance Two-Dimensional Electron Gas Confinement Effect on Transport Properties in AlGaN/ InGaN/AlGaN Double-Heterostructures

摘要

A striking effect of polarization-induced electron confinement on transport properties has been observed in nitride double-heterostructures. The two-dimensional electron gas mobility has shown to be drastically enhanced in the AlGaN/GaN/AlGaN double-heterostructure, compared with that in the conventional AlGaN/GaN single-heterostructure. The observed mobility enhancement results from the strong polarization-induced electron confinement in the double-heterostructure. Device operation of an AlGaN/GaN/AlGaN double-heterostructure field effect transistor has been demonstrated: a maximum transconductance of 180 mS/mm has been obtained for a 0.4 #mu#m gate length device. In the AlGaN/InGaN/AlGaN double-heterostructure, the increased capacity for the two-dimensional electron gas has been observed in addition to the enhanced electron mobility. The AlGaN/(In)GaN/AlGaN double-heterostructures are promising for field effect transistor applications because of their superior electron transport properties.