BUCKLING MORPHOLOGIES AND INTERFACIAL PROPERTIES OF SILICON NITRIDE FILMS DEPOSITED ON FLOAT GLASS SUBSTRATES

摘要

We report on the buckling morphologies and interfacial properties of silicon nitride films deposited on float glass substrates. The coexistence of straight-sided and telephone cord buckles can be observed in the silicon nitride films after annealing at a high temperature. The straight-sided structure is metastable and can spontaneously evolve into the telephone cord structure accompanied by the increase in the buckle width and height. The geometric parameters of various buckling structures (including the straight blister, telephone cord and their transition state) have been measured by optical microscopy and atomic force microscopy (AFM). The internal stress and interfacial adhesion of the films are evaluated and analyzed based on the continuum elastic theory. It is valid to measure the interfacial properties of thin films by simplifying the telephone cord buckle as a straight-sided structure. This measurement technique is suitable for all the film systems provided that the buckles can form in the film.