PROCESS FOR THERMALLY DEPOSITING SILICON NITRIDE AND SILICON DIOXIDE FILMS ONTO A SUBSTRATE

摘要

a thermal deposition process in the gas phase by chemical method to form films of silicon nitride and silicon dioxide on a substrate, and is characterized by the following steps: (a) the introduction of di tert butylsilane and at least a second reactive gas, capabl (e) to react with di tert butylsilane to form silicon nitride or silicon dioxide.in a reaction zone of a chemical vapour deposition with the substrate on which is formed on the silicon nitride film and a silicon dioxide film; (b) maintaining the temperature of the area of substrate between about 900 c c c ) maintaining the pressure in the area between 0.1 torr and 10 torr to about approximately; and (d) of the gas passage to be put in contact with the substrate for a long enough period to form a film of silicon nitride or silicon dioxide on a substrate.