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首页> 外文期刊>Superconductor Science & Technology >High I-c, YBa2Cu3O7-x films grown at very high rates by liquid assisted growth incorporating lightly Au-doped SrTiO3 buffers
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High I-c, YBa2Cu3O7-x films grown at very high rates by liquid assisted growth incorporating lightly Au-doped SrTiO3 buffers

机译:通过掺入轻度金掺杂的SrTiO3缓冲液的液体辅助生长以很高的速率生长的高I-c,YBa2Cu3O7-x薄膜

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摘要

YBa2Cu3O7-x (YBCO) thick films were grown by hybrid liquid phase epitaxy (HLPE) on (001) SrTiO3 (STO) substrates. In the presence of a 100 nm thick, 5 mol% Au-doped STO buffer, self-field critical current densities, J(c)(sf), at 77 K of similar to 2.4 MA cm(-2) and critical currents, I-c(sf), up to 700 A (cm-width)(-1) were achieved. The J(c) value is virtually independent of thickness and the growth rates are very high (similar to 1 mu m min(-1)). From transmission electron microscopy (TEM), Y2O3 nanocloud extended defects (similar to 100 nm in size) were identified as the pinning defects in the films. Enhanced random pinning was induced by the presence of Au in the buffer.
机译:YBa2Cu3O7-x(YBCO)厚膜通过混合液相外延(HLPE)在(001)SrTiO3(STO)衬底上生长。在存在100 nm厚,5 mol%的Au掺杂STO缓冲液的情况下,自电场临界电流密度J(c)(sf)在77 K下类似于2.4 MA cm(-2)和临界电流, Ic(sf)达到700 A(cm-width)(-1)。 J(c)值实际上与厚度无关,并且增长率非常高(类似于1μmmin(-1))。根据透射电子显微镜(TEM),Y2O3纳米云扩展缺陷(尺寸近似于100 nm)被确定为薄膜中的钉扎缺陷。缓冲液中Au的存在会诱导增强的随机钉扎作用。

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