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Ion-beam-assisted deposition of biaxially aligned yttria-stabilized zirconia template films on metallic substrates for YBCO-coated conductors

机译:离子束辅助在YBCO涂层导体的金属基材上沉积双轴取向的氧化钇稳定的氧化锆模板膜

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Biaxially textured yttria-stabilized zirconia (YSZ) films were grown on mechanically polished Hastelloy C276 (HC) substrates by ion-beam-assisted deposition and electron-beam evaporation. The surface root-mean-square (RMS) roughness of the polished HC substrates was approx= 3 nm, as measured by atomic force microscopy (AFM). A water-cooled sample stage was used to hold the substrate temperature below 100 deg C during deposition. RMS roughness of approx= 3.3 nm was measured on the deposited YSZ films by AFM. X-ray pole figures were conducted for texture analysis; in-plane texture measured from YSZ (111) PHI -scan FWHM was 13.2 deg and out-of-plane texture from the YSZ (002) omega -scan FWHM was 7 7 deg. An approx= 10 nm thick CeO_2 buffer layer was deposited on the YSZ film at 800 deg C before YBCO films were ablated by pulsed laser deposition at 780 deg C in a 250 mTorr flowing oxygen environment. Good in-plane texture with FWHM approx= 7 deg was observed in YBCO films. T_c =90 K, with sharp transition, and transport J_c of approx= 2.2 X 10~6 A cm~(-2) were observed in a 0.5 mu m thick 5 mm wide, and 1 cm long sample at 77 K in self-field.
机译:通过离子束辅助沉积和电子束蒸发,在机械抛光的Hastelloy C276(HC)衬底上生长双轴织构的氧化钇稳定的氧化锆(YSZ)膜。抛光的HC基板的表面均方根(RMS)粗糙度约为= 3 nm,通过原子力显微镜(AFM)测量。在沉积过程中,使用水冷样品台将衬底温度保持在100摄氏度以下。通过AFM在沉积的YSZ膜上测量到约3.3nm的RMS粗糙度。进行X射线极图进行纹理分析;从YSZ(111)PHI -scan FWHM测量的面内纹理为13.2度,从YSZ(002)Ω-scan FWHM测量的面内纹理为7 7度。在250毫托流动的氧气环境中,在780摄氏度下通过脉冲激光沉积烧蚀YBCO薄膜之前,在800摄氏度下在YSZ薄膜上沉积约10 nm厚的CeO_2缓冲层。在YBCO薄膜中观察到FWHM大约= 7度的良好的平面纹理。 T_c = 90 K,具有急剧的跃迁,并且在77 K时,在0.5 K m厚,5 mm宽和1 cm长的样品中观察到的传输J_c约为= 2.2 X 10〜6 A cm〜(-2)。领域。

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