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A new Si tetramer structure on Si (001)

机译:Si(001)上的新Si四聚体结构

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Interactions between Si ad-dimers on Si (001) have been studied by molecular dynamics simulations using the Stillinger-Weber potential. The interactions determine the formation of clusters from diffusing dimers. We show different pathways for the formation of multiple-dimer clusters and propose a new tetramer (T_(CC)) structure formation by two diffusing dimers interacting. This tetramer structure has been found to be energetically stable with respect to isolated ad-dimers. Moreover, their local bonding configuration is very similar to the B-type step edge which is known to be the favoured adsorption site for epitaxial growth. The proposed tetramer may play a crucial role as the nucleus of the new epitaxial layer on Si (001).
机译:使用斯蒂林格-韦伯势能通过分子动力学模拟研究了硅(001)上硅二聚体之间的相互作用。相互作用决定了由扩散二聚体形成的簇。我们展示了形成多聚二聚体簇的不同途径,并提出了通过两个扩散二聚体相互作用形成新的四聚体(T_(CC))结构的方法。已经发现这种四聚体结构相对于分离的二聚体在能量上是稳定的。此外,它们的局部结合构型与B型台阶边缘非常相似,后者被认为是外延生长的首选吸附位点。拟议的四聚体可能作为Si(001)上新外延层的核心发挥关键作用。

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