Low density vertically aligned carbon nanotube based field emission cathode with ballast resistor and coaxial gate is designed and fabricated. The ballast resistor can overcome the non-uniformity of local field enhancement factor at the emitter apex. The self-aligned fabrication process of the coaxial gate can avoid the effect of emitter tip misalignment and height non-uniformity. The emitter-gate gap is about 250 nm. As a result, the gate voltage (Vg) is just several tens volt. At Vg = 40 V, an average emission current of 0.26 μ A per CNT is achieved and the corresponding current density is as high as 275 mA cm ~(? 2).
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机译：设计并制造了带有镇流电阻和同轴栅极的低密度垂直排列碳纳米管基场发射阴极。镇流电阻器可以克服发射极顶点处局部场增强因子的不均匀性。同轴栅极的自对准制造工艺可以避免发射极尖端未对准和高度不均匀的影响。发射极-栅极间隙约为250 nm。结果，栅极电压（Vg）仅为几十伏。在Vg = 40 V时，每个CNT的平均发射电流达到0.26μA，相应的电流密度高达275 mA cm〜（？2）。
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