Dependence of barrier height and effective mass on nitrogen concentration at SiOxNy/Si interface and gate oxide thickness

摘要

In this work, we have examined the dependence of barrier height and effective mass on SiO2 thickness and nitrogen concentration at the SiOxNy/Si interface. From the measurements of the direct tunneling and Fowler-Nordheim (FN) tunneling Currents, we have determined both the barrier height and the effective mass without assuming a value for either the effective mass or the barrier height. It is observed that with increases of interfacial nitrogen concentration the barrier height decreases, and the effective mass increases. Oil the other hand, the reduction of the gate oxide thickness leads to a decrease in the barrier height but an increase in the effective mass. These results are explained using the electronic Structures of SiO2 and SiOxNy.