Pressure Dependence of Schottky Barrier Height at Pt/GaAs Interface

摘要

The pressure dependence of Schottky barrier height at the Pt/GaAs interface has been studied using a diamond anvil cell. The pressure coefficient of the Schottky barrier height suggests that whatever states are responsible for the Fermi level pinning follow the valence band edge under pressure. Within models that simple intrinsic defects are responsible for the formation of Schottky barriers in GaAs, our results suggest that these intrinsic defects may involve vacancies. 18 refs., 2 figs. (ERA citation 13:052772)