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Eletrochemical Microfabrication of Metalic Nanowires-A Revival of Electrochemical Methods for Modern Device Technologies?

机译:金属纳米线的电化学微制造-现代设备技术的电化学方法的复兴?

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摘要

Promising applications of electrochemical methods for modern device technologies already started in the 1960s. However, contamination problems usually ham- pered the applicability of, among others, electrochemical metal deposition. It is only recently that the miniaturization of electronic devices called for new technol- ogies for chip interconnects and electro- chemistry regained its importance in device fabrication. A damascene process, where copper is first electrodeposited onto the chip surface followed by a chemical- mechanical planarization proc- ess, yielded interconnects with unprece- dented quality}l] However, further minia- turization necessitates the development of new technologies for producing wires with a thickness of only a few nanometers. Recently Penner and co-workers from the University of California at Irvine met the challenge and introduced an electro- chemical method for the growth of met- allic nanowires of molybdenum on a stepped graphite surface, which exhibit electronic and mechanical properties sim- ilar to those of bulk materiaIJ2] In contrast to wires grown by, for example, step decoration on a surface by vacuum dep- osition of materials, these wires really extend into the third dimension. They exhibit hemicylindrical crossections with well defined diameters between 20 and 900 nm. The growth of such wires is a particular consequence of the electro-chemical deposition process:The wires grow by deposition of material directyly from solution,whithout any detour through adsorption and diffusion on the surface.THis leads ot multilayered,three-dimensional structures.
机译:电化学方法在现代设备技术中的应用前景广阔,始于1960年代。但是,污染问题通常会妨碍电化学金属沉积的适用性。直到最近,电子设备的小型化才要求用于芯片互连和电化学的新技术重新获得其在设备制造中的重要性。镶嵌工艺,首先将铜电沉积到芯片表面,然后进行化学机械平面化工艺,可以得到质量出众的互连} 1]。然而,进一步的小型化需要开发新的技术来生产具有厚度只有几纳米。最近,来自加州大学欧文分校的Penner及其同事迎接了这一挑战,并提出了一种电化学方法,用于在阶梯状石墨表面上生长钼的金属纳米线,该金属线具有类似于那些的电子和机械性能。与例如通过材料的真空沉积在表面上进行阶梯装饰而生长的导线相反,这些导线实际上延伸到了三维。它们具有直径在20至900 nm之间的明确定义的半圆柱形截面。此类导线的生长是电化学沉积过程的一个特殊结果:导线通过直接从溶液中沉积材料而生长,而不会由于在表面上的吸附和扩散而绕道而行。这导致了多层,三维结构。

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