采用负胶光刻工艺制备了微坑阵列胶模，通过实验分析了抛光工艺对刻蚀均匀性的影响，解决了微坑阵列刻蚀缺陷的问题。研究了酸洗对基板刻蚀的影响，得出酸洗可改善刻蚀均匀性的结论，并通过调节溶液pH值的方法解决了溶液沉淀的问题。分析了掩膜孔径对刻蚀均匀性的影响，并利用自行搭建的电化学刻蚀装置完成了直径60μm、深11μm的微坑阵列刻蚀。实验结果验证了掩膜电化学刻蚀工艺的可行性，为金属表面微小图形的制作提供了一种可行的方案。%The mask film for the micro pit array was manufactured by using negative photoresist lithography process,then experiments were made to analyze the effect of the polishing process on uniformity of the etching,so as to ultimately solve the problem of the etching defect. The influence of the pickling on the substrate was studied ,it was found that pickling can improve the etching uniformity,then precipitation problem was solved by adjusting the pH of the solution. The influence of the mask aperture on the electrochemical etching was analyzed. The micro pit array with the diameter of 60 μm and depth of 11 μm was fabricated by the self-established electrochemical etching equipment. The results verify the feasibility of the mask electrochemical etching ,which means that the proposed process can provide a referenced scheme for the production of micropattern on the metal surface.
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