Electrical Properties of Amorphous InGaZnO Thin-Film Transistors Prepared by Magnetron Sputtering with Using Kr and Xe Instead of Ar

摘要

Heavier noble gases of Kr and Xe instead of the lighter Ar during the magnetron-sputtering deposition of amorphous indium-gallium-zinc oxide films are introduced in fabricating their thin-film transistors. Higher field effect mobility can be obtained by introducing heavier noble gases, while gate bias stability shows no significant difference between gas species. Raman spectroscopic analysis suggests that the disordered structure in the film is suppressed by introducing heavier noble gases. These results suggest that the introduction of heavy noble gases can reduce damage to film by ion bombardment during the sputtering depositions, resulting in the improvement of field effect mobility.