OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR SPUTTERING TARGET AND THIN-FILM TRANSISTOR

摘要

The oxide for the semiconductor layer of the thin film transistor according to the invention, including Zn, SSN and in, is composed of metal element content (atomic%) contained in the oxide, [Z], [Sn] and [cause], respectively, meeting 1 to 3 of the following mathematical expressions.[mathematical formula 1][mathematical formula 2][math 3]According to the invention, high mobility can be realized, and the pressure tolerance (the critical value voltage shift amount before and after the pressure permission is less) can also provide excellent thin film transistor oxides.