Impact of the Use of Xe on Electrical Properties in Magnetron-Sputtering Deposited Amorphous InGaZnO Thin-Film Transistors

摘要

The use of heavier noble gases such as Xe instead of the lighter Ar during the magnetron sputtering deposition of amorphous indium-gallium-zinc oxide films is introduced to the fabrication of their thin-film transistors. Higher mobility in the Xe case is observed; typically, the saturation-region field-effect mobility is increased from ～10cm~2V~(-1) s~(-1) in the Ar case to ～13cm~2 V~(-1) s~(-1) in the Xe case. The Hall mobility is also higher in the Xe case in the carrier density range of approximately 10~(17)-10~(18)cm~(-3). These results suggest that the Xe sputtering can reduce film damage, and improve film quality.