Effects of combined Ar/O_2 plasma and microwave irradiation on electrical performance and stability in solution-deposited amorphous InGaZnO thin-film transistors

摘要

We demonstrated the improvement of electrical performance and stability of solution-deposited amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) by combined Ar/O_2 plasma and microwave irradiation (MWI) treatment at low temperature. After the combined MWI and Ar/O_2 plasma treatments, the bonding between metal and oxygen ions was strengthened, and then the solution-deposited a-IGZO film acted as a semiconductor for transistors. In addition, the Ar/O_2 plasma treatment promoted the reliability of solution-deposited a-IGZO TFTs owing to the removal of residual carbon, which easily traps electrons. Consequently, the solution-deposited a-IGZO TFT treated with the combination of Ar/O_2 plasma and MWI exhibited excellent electrical stability as well as an improved transfer characteristic. Therefore, the combined Ar/O_2 plasma and MWI treatment is a feasible post-treatment to realize flexible electronics with solution-deposited metal oxide thin films.