Effect ofAtomic Layer DepositionTemperature onthe Electrical Characteristics of Al_2O_3-passivated Amorphous InGaZnO Thin-Film Transistors

摘要

Various passivation layers have beenextensivelyexploredtoaddresstheinstabilityinoxide-based thin-film transistors (TFTs).Among the most utilized passivation layers, Al2O3has beenknownto exhibit excellent barrier propertyagainstatmospheric gases such as O_2and H_2O.Previously, we havereported thepotential of ararely-usedprecursor, dimethylaluminum hydride (DMAH), for the atomic layer deposition (ALD) of Al_2O_3passivation fora-IGZO TFTswhere weshowedimproved stability withusing DMAH compared with using the commonprecursor, trimethylaluminum.In this work, weinvestigated the effect of ALD temperatureon theelectrical characteristics ofDMAH-Al2O3-passivateda-IGZO TFTs.