Top Gate Amorphous In-Ga-Zn-O Thin Film Transistors Fabricated on Soda-Lime-Silica Glass Substrates

摘要

This work presents a comparative analysis of top gate a-IGZO TFTs fabricated on both soda-lime-silica glass and alkali-free borosilicate glass. Low-temperature ALD is selected for the deposition of gate dielectric to minimize a thermal stress. Comparing with TFTs on alkali-free borosilicate glass, TFTs with soda-lime-glass show similar threshold voltage and sub-threshold swing, but slightly degraded effective mobility, stability and uniformity. The results of atomic force measurements are provided to explain the uniformity degradation.