TOP-GATE THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY PANEL COMPRISING TOP-GATE THIN FILM TRANSISTOR

摘要

The present disclosure provides a top-gate thin film transistor, a manufacturing method thereof, and an array substrate and a display panel each comprising the top-gate thin film transistor. The top-gate thin film transistor comprises a light-shielding layer formed between the base substrate and the active layer and made of a non-metallic material. The non-metallic material may be a silicone material, such as a polyhedral oligomeric silsesquioxane or a linear silicone resin.