首页> 外文期刊>SID International Symposium: Digest of Technology Papers >Fabrication of an All-Screen Printed Oxide Semiconductor Thin Film Transistor Active-Matrix Backplane
【24h】

Fabrication of an All-Screen Printed Oxide Semiconductor Thin Film Transistor Active-Matrix Backplane

机译:全屏印刷氧化物半导体薄膜晶体管有源矩阵背板的制作

获取原文
获取原文并翻译 | 示例

摘要

An all-screen printed oxide semiconductor thin film transistor (TFT) active-matrix backplane (AMBP) was investigated. We introduced a new pixel layout which reduces the leakage current between source and drain electrodes. As a result, the TFT-AMBP with 33.8 ppi for an electrophoretic display was successfully fabricated by using screen printing for the first time. The display size and resolution are 750 mm × 550 mm and 33.8 ppi, respectively.
机译:研究了全屏印刷氧化物半导体薄膜晶体管(TFT)有源矩阵背板(AMBP)。我们引入了一种新的像素布局,可减少源电极和漏电极之间的泄漏电流。结果,第一次通过使用丝网印刷成功地制造了用于电泳显示器的具有33.8ppi的TFT-AMBP。显示器尺寸和分辨率分别为750 mm×550 mm和33.8 ppi。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号