首页>
外国专利>
oxide including film and oxide semiconductor thin film transistor and fabrication method of oxide semiconductor thin film transistor using the same
oxide including film and oxide semiconductor thin film transistor and fabrication method of oxide semiconductor thin film transistor using the same
展开▼
机译:包含膜的氧化物和氧化物半导体薄膜晶体管以及使用该氧化物的氧化物半导体薄膜晶体管的制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention can provide an oxide insulating film having an intrinsic resistance value higher than that of the oxide semiconductor film by two or more digits by adding an additional carbon atom to the oxygen atom and can form an oxide semiconductor material containing an appropriate amount of oxygen atoms, , An oxide semiconductor thin film transistor device using an oxide insulating layer material containing an appropriate amount of carbon atoms added to an oxygen atom as a gate insulating layer, a channel protecting layer, and a passivation layer, and a method of manufacturing the oxide semiconductor thin film transistor element. The insulating film is formed by adding an additional carbon atom to the oxygen atom in the oxide semiconductor layer.
展开▼