OXIDE INCLUDING FILM, AND OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR, AND FABRICATION METHOD OF OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR USING THE SAME

摘要

PURPOSE: An oxide insulation film, an oxide semiconductor thin film transistor, and a manufacturing method thereof are provided to have high specific resistance by adding a carbon atom to an oxygen atom. CONSTITUTION: A carbon atom is additionally added to an oxygen atom. The carbon atom is added with 1-5% of a gas flow rate in sputtering. An oxide semiconductor material contains the oxygen atom of an appropriate amount. The oxide semiconductor material is used as a channel semiconductor layer. An oxide insulation layer material contains the carbon atom of the appropriate amount added to the oxygen atom.